Fotodiodi - Fototransistor
Fotodiodi - Fototransistor
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Tipologia | Bit Rate (bps) | Caratteristiche | Sensibilità Ottica (dBm), Typ. |
|---|---|---|---|---|---|---|---|---|---|---|---|
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KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
150
|
Package
Side view, plastic mold
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
78
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
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KPDX10G-XMD Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, XMD 10Gbps PIN-TIA Receiver |
Package
InGaAs ROSA with FPC (Flexible-Printed Circuit)
|
Tipologia
InGaAs PD-TIA Receivers
|
Bit Rate (bps)
10G
|
Caratteristiche
ROSA
|
Sensibilità Ottica (dBm), Typ.
-18 @ 3.3V
|