Fotodiodi - Fototransistor
Fotodiodi - Fototransistor
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Tipologia | Bit Rate (bps) | Caratteristiche | Sensibilità Ottica (dBm), Typ. |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
KPD1203K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
140
|
Package
TO-18, epoxy lens
|
Peak sens. wavelenght (nm)
880
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
11
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
|||
|
|
KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
TO-18, epoxy lens
|
Peak sens. wavelenght (nm)
840
|
Sensitive Area (mm)
1.30 x 1.60
|
Short circuit current (µA)
24
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
|||
|
KPDX10G-XMD Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, XMD 10Gbps PIN-TIA Receiver |
Package
InGaAs ROSA with FPC (Flexible-Printed Circuit)
|
Tipologia
InGaAs PD-TIA Receivers
|
Bit Rate (bps)
10G
|
Caratteristiche
ROSA
|
Sensibilità Ottica (dBm), Typ.
-18 @ 3.3V
|