Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

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Prodotto	Descrizione	Chip Material	Half Angle (deg)	Lunghezza D'onda (nm)	Package	Potenza di Uscita @If(mA)	Potenza di Uscita (mW)	Tipologia	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Caratteristiche	Dark current Tipica	Sensitive Area (µmɸ)	Bit Rate (bps)	Sensibilità Ottica (dBm), Typ.
Confronta	KED351RKD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED	Chip Material GaAIAs	Half Angle (deg) 32	Lunghezza D'onda (nm) 660	Package TO-18, epoxy lens	Potenza di Uscita @If(mA) 20	Potenza di Uscita (mW) 3.6	Tipologia Red LEDs
Confronta	KED353KDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED	Chip Material GaAIAs	Half Angle (deg) 42	Lunghezza D'onda (nm) 870	Package TO-18, epoxy lens	Potenza di Uscita @If(mA) 20	Potenza di Uscita (mW) 6	Tipologia Infrared LEDs
Confronta	KED602K Kyosemi, Photodevices for Sensors - Emitters, Infrared LED	Chip Material GaAIAs	Half Angle (deg) 45	Lunghezza D'onda (nm) 890	Package TO-18, epoxy lens	Potenza di Uscita @If(mA) 50	Potenza di Uscita (mW) 15	Tipologia Infrared LEDs
Confronta	KPD1203K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 140		Package TO-18, epoxy lens			Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 11	Short circuit current (lx) 1000
Confronta	KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 120		Package TO-18, epoxy lens			Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 24	Short circuit current (lx) 1000
Confronta	KPDE004 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Low Dark Current High Speed				Package Hermetic sealed, Pigtail			Tipologia InGaAs Photodiodes					Caratteristiche High speed	Dark current Tipica 20pA @ 5V	Sensitive Area (µmɸ) 45
Confronta	KPDE006 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Low Dark Current High Speed				Package Hermetic sealed, Pigtail			Tipologia InGaAs Photodiodes					Caratteristiche High speed	Dark current Tipica 30pA @ 2V	Sensitive Area (µmɸ) 60
Confronta	KPDE008 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Low Dark Current High Speed				Package Hermetic sealed, Pigtail			Tipologia InGaAs Photodiodes					Caratteristiche High speed	Dark current Tipica 30pA @ 5V	Sensitive Area (µmɸ) 80
Confronta	KPDE020 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità				Package Hermetic sealed, Pigtail			Tipologia InGaAs Photodiodes					Caratteristiche High speed	Dark current Tipica 50pA @ 5V	Sensitive Area (µmɸ) 200
Confronta	KPDX1GK Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, 1.25Gbps InGaAs PIN PD-TIA				Package Hermetic sealed, Pigtail			Tipologia InGaAs PD-TIA Receivers					Caratteristiche Preamplified receivers			Bit Rate (bps) 1.25G	Sensibilità Ottica (dBm), Typ. -32 @ 3.3V