Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Chip Material | Half Angle (deg) | Lunghezza D'onda (nm) | Package | Potenza di Uscita @If(mA) | Potenza di Uscita (mW) | Tipologia | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KED365UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led |
Chip Material
GaN
|
Half Angle (deg)
16
|
Lunghezza D'onda (nm)
367
|
Package
TO-18, hermetic seal
|
Potenza di Uscita @If(mA)
20
|
Potenza di Uscita (mW)
0.7
|
Tipologia
Ultra Violet LEDs
|
||||
|
KPD1203K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
140
|
Package
TO-18, epoxy lens
|
Tipologia
Silicon Photodiodes
|
Peak sens. wavelenght (nm)
880
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
11
|
Short circuit current (lx)
1000
|
||||
|
Discontinued
|
KPD101T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
140
|
Package
Surface mount
|
Tipologia
Silicon Photodiodes
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
6
|
Short circuit current (lx)
1000
|
||||
|
Discontinued
|
KPD151T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
140
|
Package
Surface mount
|
Tipologia
Silicon Photodiodes
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
1.25 x 1.25
|
Short circuit current (µA)
15
|
Short circuit current (lx)
1000
|