Fotodiodi - Fototransistor
Fotodiodi - Fototransistor
| Prodotto | Descrizione | Package | Responsività (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Tipologia | Caratteristiche | Dark current Tipica |
|---|---|---|---|---|---|---|---|---|
|
KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsività (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Area (µmɸ)
1500
|
Sensitive Wavelenght (nm)
900 - 1700
|
Tipologia
InGaAs NIR Photodiodes
|
||
|
KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode |
Package
Chip
|
Sensitive Area (µmɸ)
1500
|
Tipologia
Si PIN Photodiodes
|
Caratteristiche
Si high speed
|
Dark current Tipica
0.8nA @ 10V
|