Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

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Prodotto	Descrizione	Half Angle (deg)	Package	Peak sens. wavelenght (nm)	Responsività (mA/W) @λ(nm)	Sensitive Area (mm)	Tipologia	Chip Material	Lunghezza D'onda (nm)	Potenza di Uscita @If(mA)	Potenza di Uscita (mW)	Short circuit current (µA)	Short circuit current (lx)	Sensitive Area (µmɸ)	Dimensioni	Lunghezza d'onda	Temperatura di funzionamento	Tensione Diretta Tipica (V)
Confronta	KDA16S Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi	Half Angle (deg) -	Package Surface mount	Peak sens. wavelenght (nm) 900	Responsività (mA/W) @λ(nm) 540 @ 850	Sensitive Area (mm) 0.74 x 2.0 (per 1ch)	Tipologia Silicon Photodiode Array & Position sensing detector (PSD)
Confronta	KED050CX-T Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Infrared LED Pigtail	Half Angle (deg) -	Package Pigtail				Tipologia Point Source LEDs	Chip Material GaAIAs	Lunghezza D'onda (nm) 850	Potenza di Uscita @If(mA) 50	Potenza di Uscita (mW) -16(dBm)
Confronta	KPD31S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) -	Package Surface mount	Peak sens. wavelenght (nm) 950		Sensitive Area (mm) 2.80 x 0.80	Tipologia Silicon Photodiodes					Short circuit current (µA) 22	Short circuit current (lx) 1000
Confronta	KPD3212 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi	Half Angle (deg) -	Package Surface mount	Peak sens. wavelenght (nm) 950	Responsività (mA/W) @λ(nm) 16(µA) @ 1000 lx	Sensitive Area (mm) 1.5 x 1.0 (per 1ch)	Tipologia Silicon Photodiode Array & Position sensing detector (PSD)
Confronta	KPDE086S-H85P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi	Half Angle (deg) -	Package TO-46, hermetic seal, TE cooler	Peak sens. wavelenght (nm) 1600	Responsività (mA/W) @λ(nm) 1000 @ 1550	Sensitive Area (mm) 0.86 x 0.86	Tipologia Thermoelectrically Cooled InGaAs-InAs Photodiodes
Confronta	KPID020D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi	Half Angle (deg) -	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 700	Responsività (mA/W) @λ(nm) 350 @ 850		Tipologia High Speed Silicon Photodiodes							Sensitive Area (µmɸ) 200
Confronta	NS275L-3DFG Nitride Semiconductor - LED Deep UV	Half Angle (deg) 125	Package Surface mount				Tipologia Ultra Violet LEDs				Potenza di Uscita (mW) 11.5				Dimensioni 3.5 x 3.5 x 1.2	Lunghezza d'onda 270-280 nm	Temperatura di funzionamento -30 ~ +60 °C	Tensione Diretta Tipica (V) 7.0
Confronta	KED050CXK Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED	Half Angle (deg) 125	Package TO-46, epoxy lens				Tipologia Point Source LEDs	Chip Material GaAIAs	Lunghezza D'onda (nm) 850	Potenza di Uscita @If(mA) 50	Potenza di Uscita (mW) 5
Discontinued Confronta	KPDE86S-H54P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi	Half Angle (deg) -	Package TO-5, hermetic seal, TE cooler	Peak sens. wavelenght (nm) 1600	Responsività (mA/W) @λ(nm) 1000 @ 1550	Sensitive Area (mm) 0.86 x 0.86	Tipologia Thermoelectrically Cooled InGaAs-InAs Photodiodes
Discontinued Confronta	KPDS100-H54P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi	Half Angle (deg) -	Package TO-5, hermetic seal, TE cooler	Peak sens. wavelenght (nm) 3300	Responsività (mA/W) @λ(nm) 1200 @ 3300	Sensitive Area (mm) 1.00 x 1.00	Tipologia Thermoelectrically Cooled InGaAs-InAs Photodiodes