Fotodiodi - Fototransistor
Fotodiodi - Fototransistor
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Photo Current Vce = 5 V | Sensitive Area (mm) | Tipologia |
|---|---|---|---|---|---|---|---|
|
Discontinued
|
KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
120
|
Package
ϕ3 ceramic, epoxy lens
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
4 (mA) 1000 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
Tipologia
Silicon Phototransistors
|