Fotodiodi - Fototransistor | Tecnosens S.p.a. Sensori, Sensori optoelettronici

Fotodiodi - Fototransistor

Cambia visualizzazione

Prodotto	Descrizione	Half Angle (deg)	Package	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Tipologia	Photo Current Vce = 5 V
Confronta	KPD1203K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 140	Package TO-18, epoxy lens	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 11	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Confronta	KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 120	Package TO-18, epoxy lens	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 24	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Discontinued Confronta	KPD1201C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 145	Package ϕ3 ceramic, epoxy lens	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 12	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Discontinued Confronta	KPID1301C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 145	Package ϕ3 ceramic, epoxy lens	Peak sens. wavelenght (nm) 900	Sensitive Area (mm) 1.10 x 1.10	Short circuit current (µA) 12	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Discontinued Confronta	KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi	Half Angle (deg) 120	Package ϕ3 ceramic, epoxy lens	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64			Tipologia Silicon Phototransistors	Photo Current Vce = 5 V 4 (mA) 1000 (lx)