Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology |
|---|---|---|---|---|---|---|
|
KPA4-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Array
|
Typical Dark Current
80pA @ 5V
|
Package
4ch array with 250µm pitch
|
Sensitive Area (µmɸ)
80
|
Typology
InGaAs Photodiodes
|
|
KPA8-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Array
|
Typical Dark Current
80pA @ 5V
|
Package
8ch array with 250µm pitch
|
Sensitive Area (µmɸ)
80
|
Typology
InGaAs Photodiodes
|
|
KPDM024MT Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Array
|
Typical Dark Current
80pA @ 5V
|
Package
Hermetic sealed, Pigtailed with ribon fiber
|
Sensitive Area (µmɸ)
-
|
Typology
InGaAs Photodiodes
|
|
Discontinued
|
KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Array
|
Typical Dark Current
30pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
50
|
Typology
InGaAs Photodiodes
|
|
Discontinued
|
KPDE030SL Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
L-band
|
Typical Dark Current
100pA @ 5V
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs Photodiodes
|