Optoelectronic sensors | Tecnosens S.p.a.

Optoelectronic sensors

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Product	Description	Dimension	Half Angle (deg)	Wavelength	Package	Output Power (mW)	Operating temperature	Typical Direct Voltage (V)	Typology	Chip Material	Wavelength (nm)	Output Power @lf(mA)	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)
Add to comparison	NSxxxL-2SVR Nitride Semiconductor - LED UV	Dimension 2.7 x 2.7 x 2.0	Half Angle (deg) 110	Wavelength 360-370 nm 380-390 nm 400-410 nm	Package Surface mount	Output Power (mW) 800 930 1000	Operating temperature -10 ~ +85 °C	Typical Direct Voltage (V) 3.8 3.6 3.5	Typology Ultra Violet LEDs
Discontinued Add to comparison	KED080DXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED		Half Angle (deg) 110		Package TO-46, hermetic seal	Output Power (mW) 1.0			Typology Point Source LEDs	Chip Material GaAIAs	Wavelength (nm) 850	Output Power @lf(mA) 20
Discontinued Add to comparison	KED351CDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED		Half Angle (deg) 145		Package ϕ3 ceramic, epoxy lens	Output Power (mW) 6			Typology Infrared LEDs	Chip Material GaAIAs	Wavelength (nm) 870	Output Power @lf(mA) 20
Discontinued Add to comparison	KED602C Kyosemi, Photodevices for Sensors - Emitters, Infrared LED		Half Angle (deg) 110		Package ϕ3 ceramic, epoxy lens	Output Power (mW) 6			Typology Infrared LEDs	Chip Material GaAIAs	Wavelength (nm) 890	Output Power @lf(mA) 40
Discontinued Add to comparison	KED661T1 Kyosemi, Photodevices for Sensors - Emitters, AIGaInP Red LED		Half Angle (deg) 145		Package Surface mount	Output Power (mW) 14			Typology Red LEDs	Chip Material AIGaInP	Wavelength (nm) 660	Output Power @lf(mA) 20
Discontinued Add to comparison	KED661T2 Kyosemi, Photodevices for Sensors - Emitters, AIGaInP Red LED		Half Angle (deg) 145		Package Surface mount	Output Power (mW) 14			Typology Red LEDs	Chip Material AIGaInP	Wavelength (nm) 660	Output Power @lf(mA) 20
Discontinued Add to comparison	KEDE1458K Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED		Half Angle (deg) 110		Package TO-46, epoxy lens	Output Power (mW) 3			Typology Infrared LEDs	Chip Material InGaAsP	Wavelength (nm) 1450	Output Power @lf(mA) 50
Discontinued Add to comparison	KPD1201C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 145		Package ϕ3 ceramic, epoxy lens				Typology Silicon Photodiodes				Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 12
Discontinued Add to comparison	KPID1301C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 145		Package ϕ3 ceramic, epoxy lens				Typology Silicon Photodiodes				Peak sens. wavelenght (nm) 900	Sensitive Area (mm) 1.10 x 1.10	Short circuit current (µA) 12