Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology | Peak sens. wavelenght (nm) | Photo Current Vce = 5 V | Sensitive Area (mm) |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
KED109Z-N Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs High Power Infrare LED |
Chip Material
GaAIAs
|
Half Angle (deg)
18
|
Wavelength (nm)
890
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
Typology
Parallel Beam LEds
|
|||
|
Discontinued
|
KPT801H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Typology
Silicon Phototransistors
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
2 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
||||
|
Discontinued
|
KPT801HB Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Typology
Silicon Phototransistors
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
3 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
||||
|
Discontinued
|
KPT811H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Typology
Silicon Phototransistors
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
2 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|