Optoelectronic sensors | Tecnosens S.p.a.

Optoelectronic sensors

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Product	Description	Chip Material	Half Angle (deg)	Wavelength (nm)	Package	Output Power @lf(mA)	Output Power (mW)	Typology	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Photo Current Vce = 5 V
Discontinued Add to comparison	KED351CDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED	Chip Material GaAIAs	Half Angle (deg) 145	Wavelength (nm) 870	Package ϕ3 ceramic, epoxy lens	Output Power @lf(mA) 20	Output Power (mW) 6	Typology Infrared LEDs
Discontinued Add to comparison	KED351RCD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED	Chip Material GaAIAs	Half Angle (deg) 160	Wavelength (nm) 660	Package ϕ3 ceramic, epoxy lens	Output Power @lf(mA) 20	Output Power (mW) 3.2	Typology Red LEDs
Discontinued Add to comparison	KED501C Kyosemi, Photodevices for Sensors - Emitters, GaAs Infrared LED	Chip Material GaAs	Half Angle (deg) 170	Wavelength (nm) 950	Package ϕ3 ceramic, epoxy lens	Output Power @lf(mA) 40	Output Power (mW) 4.5	Typology Infrared LEDs
Discontinued Add to comparison	KED602C Kyosemi, Photodevices for Sensors - Emitters, Infrared LED	Chip Material GaAIAs	Half Angle (deg) 110	Wavelength (nm) 890	Package ϕ3 ceramic, epoxy lens	Output Power @lf(mA) 40	Output Power (mW) 6	Typology Infrared LEDs
Discontinued Add to comparison	KPD1201C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 145		Package ϕ3 ceramic, epoxy lens			Typology Silicon Photodiodes	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 12
Discontinued Add to comparison	KPID1301C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 145		Package ϕ3 ceramic, epoxy lens			Typology Silicon Photodiodes	Peak sens. wavelenght (nm) 900	Sensitive Area (mm) 1.10 x 1.10	Short circuit current (µA) 12
Discontinued Add to comparison	KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi		Half Angle (deg) 120		Package ϕ3 ceramic, epoxy lens			Typology Silicon Phototransistors	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64		Photo Current Vce = 5 V 4 (mA) 1000 (lx)