Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Package | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Typology | Peak sens. wavelenght (nm) | Chip Material | Half Angle (deg) | Wavelength (nm) | Output Power @lf(mA) | Output Power (mW) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Area (µmɸ)
1500
|
Sensitive Wavelenght (nm)
900 - 1700
|
Typology
InGaAs NIR Photodiodes
|
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KPID020D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
350 @ 850
|
Sensitive Area (µmɸ)
200
|
Typology
High Speed Silicon Photodiodes
|
Peak sens. wavelenght (nm)
700
|
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KED351HDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
12
|
Wavelength (nm)
870
|
Output Power @lf(mA)
20
|
Output Power (mW)
4
|
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KED351RHD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Package
TO-18, hermetic seal
|
Typology
Red LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
10
|
Wavelength (nm)
660
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.8
|
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KED354RHD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Package
TO-18, hermetic seal
|
Typology
Red LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
45
|
Wavelength (nm)
660
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
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|
KED365UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led |
Package
TO-18, hermetic seal
|
Typology
Ultra Violet LEDs
|
Chip Material
GaN
|
Half Angle (deg)
16
|
Wavelength (nm)
367
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.7
|
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KED372UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Package
TO-18, hermetic seal
|
Typology
Ultra Violet LEDs
|
Chip Material
InGaN
|
Half Angle (deg)
12
|
Wavelength (nm)
373
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.5
|
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KED372UHB Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Package
TO-18, hermetic seal
|
Typology
Ultra Violet LEDs
|
Chip Material
InGaN
|
Half Angle (deg)
12
|
Wavelength (nm)
378
|
Output Power @lf(mA)
20
|
Output Power (mW)
7.2
|
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KED373UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Package
TO-18, hermetic seal
|
Typology
Ultra Violet LEDs
|
Chip Material
InGaN
|
Half Angle (deg)
100
|
Wavelength (nm)
373
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.5
|
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|
KED530HDB Multi-wavelenght LED |
Package
TO-18, hermetic seal
|
Typology
Multi Wavelenght LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
60
|
Wavelength (nm)
660
|
Output Power @lf(mA)
50
|
Output Power (mW)
4
|