Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Package | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Typology | Characteristics | Typical Dark Current |
|---|---|---|---|---|---|---|---|---|
|
KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Area (µmɸ)
1500
|
Sensitive Wavelenght (nm)
900 - 1700
|
Typology
InGaAs NIR Photodiodes
|
||
|
KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode |
Package
Chip
|
Sensitive Area (µmɸ)
1500
|
Typology
Si PIN Photodiodes
|
Characteristics
Si high speed
|
Typical Dark Current
0.8nA @ 10V
|