Fotodiodi - Fototransistor | Tecnosens S.p.a. Sensori, Sensori optoelettronici

Fotodiodi - Fototransistor

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Prodotto	Descrizione	Half Angle (deg)	Package	Peak sens. wavelenght (nm)	Responsività (mA/W) @λ(nm)	Sensitive Area (mm)	Tipologia	Short circuit current (µA)	Short circuit current (lx)	Sensitive Area (µmɸ)	Sensitive Wavelenght (nm)
Confronta	KDA16S Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi	Half Angle (deg) -	Package Surface mount	Peak sens. wavelenght (nm) 900	Responsività (mA/W) @λ(nm) 540 @ 850	Sensitive Area (mm) 0.74 x 2.0 (per 1ch)	Tipologia Silicon Photodiode Array & Position sensing detector (PSD)
Confronta	KPD31S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) -	Package Surface mount	Peak sens. wavelenght (nm) 950		Sensitive Area (mm) 2.80 x 0.80	Tipologia Silicon Photodiodes	Short circuit current (µA) 22	Short circuit current (lx) 1000
Confronta	KPD3212 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi	Half Angle (deg) -	Package Surface mount	Peak sens. wavelenght (nm) 950	Responsività (mA/W) @λ(nm) 16(µA) @ 1000 lx	Sensitive Area (mm) 1.5 x 1.0 (per 1ch)	Tipologia Silicon Photodiode Array & Position sensing detector (PSD)
Confronta	KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi		Package TO-18, hermetic seal		Responsività (mA/W) @λ(nm) 1.0 @ 1550		Tipologia InGaAs NIR Photodiodes			Sensitive Area (µmɸ) 1500	Sensitive Wavelenght (nm) 900 - 1700
Confronta	KPID020D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi	Half Angle (deg) -	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 700	Responsività (mA/W) @λ(nm) 350 @ 850		Tipologia High Speed Silicon Photodiodes			Sensitive Area (µmɸ) 200
Confronta	KPD1201H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 23	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 880		Sensitive Area (mm) 0.92 x 0.92	Tipologia Silicon Photodiodes	Short circuit current (µA) 60	Short circuit current (lx) 1000
Confronta	KPD1203H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 100	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 880		Sensitive Area (mm) 0.92 x 0.92	Tipologia Silicon Photodiodes	Short circuit current (µA) 8	Short circuit current (lx) 1000
Confronta	KPD1801H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 34	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 840		Sensitive Area (mm) 1.30 x 1.60	Tipologia Silicon Photodiodes	Short circuit current (µA) 70	Short circuit current (lx) 1000
Confronta	KPD1803H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 95	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 840		Sensitive Area (mm) 1.30 x 1.60	Tipologia Silicon Photodiodes	Short circuit current (µA) 17	Short circuit current (lx) 1000
Confronta	KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 120	Package Surface mount	Peak sens. wavelenght (nm) 950		Sensitive Area (mm) 2.59 x 2.59	Tipologia Silicon Photodiodes	Short circuit current (µA) 68	Short circuit current (lx) 1000