Fotodiodi - Fototransistor | Tecnosens S.p.a. Sensori, Sensori optoelettronici

Fotodiodi - Fototransistor

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Prodotto	Descrizione	Tipologia	Half Angle (deg)	Package	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Fattore di Amplicazione	Responsività (mA/W) @λ(nm)	Sensitive Area (µmɸ)
Confronta	KPC8-T Photodevices for Sensors - Detectors, InGaAs Photovolotaic Power Converter, Kyosemi	Tipologia Thermoelectrically Cooled InGaAs-InAs Photodiodes
Confronta	KPD1201H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 23	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 60	Short circuit current (lx) 1000
Confronta	KPD1203H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 100	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 8	Short circuit current (lx) 1000
Confronta	KPD1203K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 140	Package TO-18, epoxy lens	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 11	Short circuit current (lx) 1000
Confronta	KPD1801H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 34	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 70	Short circuit current (lx) 1000
Confronta	KPD1803H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 95	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 17	Short circuit current (lx) 1000
Confronta	KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 120	Package TO-18, epoxy lens	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 24	Short circuit current (lx) 1000
Confronta	KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 150	Package Side view, plastic mold	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 78	Short circuit current (lx) 1000
Confronta	KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 120	Package Surface mount	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 68	Short circuit current (lx) 1000
Confronta	KPDA020P-H8 Kyosemi Photodevices for sensors - Detectors, Fotodiodi Effetto Valanga, Silicon Avalanche Photodiodes	Tipologia Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 780				Fattore di Amplicazione 150	Responsività (mA/W) @λ(nm) 450 @ 850	Sensitive Area (µmɸ) 200