Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

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Prodotto	Descrizione	Dimensioni	Half Angle (deg)	Lunghezza d'onda	Package	Potenza di Uscita (mW)	Temperatura di funzionamento	Tensione Diretta Tipica (V)	Tipologia	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Photo Current Vce = 5 V
Confronta	NS275L-6DFG Nitride Semiconductor - LED Deep UV	Dimensioni 6.3 x 6.3 x 1.8	Half Angle (deg) 120	Lunghezza d'onda 270-280 nm	Package Surface mount	Potenza di Uscita (mW) 19	Temperatura di funzionamento -30 ~ +60 °C	Tensione Diretta Tipica (V) 7.0	Tipologia Ultra Violet LEDs
Confronta	NSxxxL-3SVR Nitride Semiconductor - LED UV	Dimensioni 3.5 x 3.5 x 2.0	Half Angle (deg) 120	Lunghezza d'onda 380-390 nm 390-400 nm 400-410 nm	Package Surface mount	Potenza di Uscita (mW) 1200 1100	Temperatura di funzionamento -10 ~ +85 °C	Tensione Diretta Tipica (V) 3.6 3.5	Tipologia Ultra Violet LEDs
Confronta	KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 120		Package TO-18, epoxy lens				Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 24	Short circuit current (lx) 1000
Confronta	KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 120		Package Surface mount				Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 68	Short circuit current (lx) 1000
Discontinued Confronta	KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 120		Package ϕ 6,5 ceramic, epoxy lens				Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 70	Short circuit current (lx) 1000
Discontinued Confronta	KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi		Half Angle (deg) 120		Package ϕ3 ceramic, epoxy lens				Tipologia Silicon Phototransistors	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 4 (mA) 1000 (lx)