Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Tipologia | Responsività (mA/W) @λ(nm) |
|---|---|---|---|---|---|---|---|---|---|
|
|
KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
150
|
Package
Side view, plastic mold
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
78
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
|
|
Discontinued
|
KPDE86S-H54P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Half Angle (deg)
-
|
Package
TO-5, hermetic seal, TE cooler
|
Peak sens. wavelenght (nm)
1600
|
Sensitive Area (mm)
0.86 x 0.86
|
Tipologia
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|
Responsività (mA/W) @λ(nm)
1000 @ 1550
|
||
|
Discontinued
|
KPDS100-H54P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Half Angle (deg)
-
|
Package
TO-5, hermetic seal, TE cooler
|
Peak sens. wavelenght (nm)
3300
|
Sensitive Area (mm)
1.00 x 1.00
|
Tipologia
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|
Responsività (mA/W) @λ(nm)
1200 @ 3300
|