Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

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Prodotto	Descrizione	Half Angle (deg)	Package	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Tipologia	Fattore di Amplicazione	Responsività (mA/W) @λ(nm)	Sensitive Area (µmɸ)	Caratteristiche	Dark current Tipica	Sensitive Wavelenght (nm)
Discontinued Confronta	KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 120	Package ϕ 6,5 ceramic, epoxy lens	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 70	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Discontinued Confronta	KPDA020-H8 Kyosemi Photodevices for sensors - Detectors, Fotodiodi Effetto Valanga, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670				Tipologia Silicon Avalanche Photodiodes	Fattore di Amplicazione 150	Responsività (mA/W) @λ(nm) 350 @ 800	Sensitive Area (µmɸ) 200
Discontinued Confronta	KPDA050-H8 Kyosemi Photodevices for sensors - Detectors, Fotodiodi Effetto Valanga, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670				Tipologia Silicon Avalanche Photodiodes	Fattore di Amplicazione 150	Responsività (mA/W) @λ(nm) 350 @ 800	Sensitive Area (µmɸ) 500
Discontinued Confronta	KPDA100-H8 Kyosemi Photodevices for sensors - Detectors, Fotodiodi Effetto Valanga, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670				Tipologia Silicon Avalanche Photodiodes	Fattore di Amplicazione 150	Responsività (mA/W) @λ(nm) 350 @ 660	Sensitive Area (µmɸ) 1000
Discontinued Confronta	KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità		Package Chip					Tipologia InGaAs Photodiodes			Sensitive Area (µmɸ) 50	Caratteristiche Array	Dark current Tipica 30pA @ 5V
Discontinued Confronta	KPDE030 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi		Package Hermetic sealed, Pigtail					Tipologia InGaAs NIR Photodiodes		Responsività (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Area (µmɸ) 300			Sensitive Wavelenght (nm) 900 - 1700
Discontinued Confronta	KPDE0301M51 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi		Package ϕ5 plastic mold					Tipologia InGaAs NIR Photodiodes		Responsività (mA/W) @λ(nm) 0.9 @ 1550	Sensitive Area (µmɸ) 300			Sensitive Wavelenght (nm) 900 - 1700
Discontinued Confronta	KPDE030SL Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità		Package Hermetic sealed					Tipologia InGaAs Photodiodes			Sensitive Area (µmɸ) 300	Caratteristiche L-band	Dark current Tipica 100pA @ 5V
Discontinued Confronta	KPDE086S Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi		Package Hermetic sealed, Pigtail					Tipologia InGaAs NIR Photodiodes		Responsività (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Area (µmɸ) 860x860			Sensitive Wavelenght (nm) 900 - 1700
Discontinued Confronta	KPDE10GC-V3 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo 10 Gbps		Package Filp-chip type Chip on carrier					Tipologia InGaAs Photodiodes			Sensitive Area (µmɸ) 45	Caratteristiche High speed	Dark current Tipica 10pA @ 5V