Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Montaggio | Output | Output Mode | Paeak | Serie | Tipo di uscita | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Tipologia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Discontinued
|
KL898 Modello KL898 2 C/W (890/660nm) Light Emitting Diode in stelo ceramico con con resina epossidica. |
Montaggio
Ceramic base & Resin
|
Output
Photo Diode
|
Output Mode
Livello logico alto
|
Paeak
660/890nm
|
Serie
Serie KL
|
Tipo di uscita
Pull-up
|
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Discontinued
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KPD101M31 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
60
|
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
30
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
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|
Discontinued
|
KPD101M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
90
|
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
16
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
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|
Discontinued
|
KPD101M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
76
|
Package
ϕ5 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
19
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
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|
Discontinued
|
KPD101T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
140
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
6
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
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|
Discontinued
|
KPD104M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
70
|
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
10
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
||||||
|
Discontinued
|
KPD104M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
40
|
Package
ϕ5 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
55
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
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|
Discontinued
|
KPD1201C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
145
|
Package
ϕ3 ceramic, epoxy lens
|
Peak sens. wavelenght (nm)
880
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
12
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
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|
Discontinued
|
KPD151M53 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
130
|
Package
ϕ5 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
1.25 x 1.25
|
Short circuit current (µA)
16
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
||||||
|
Discontinued
|
KPD151T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
140
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
1.25 x 1.25
|
Short circuit current (µA)
15
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|