Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Package | Responsività (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Tipologia | Half Angle (deg) | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Caratteristiche | Dark current Tipica |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
Discontinued
|
KPDE300 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-5, hermetic seal
|
Responsività (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Area (µmɸ)
3000
|
Sensitive Wavelenght (nm)
900 - 1700
|
Tipologia
InGaAs NIR Photodiodes
|
|||||
|
Discontinued
|
KPDE86S-H54P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Package
TO-5, hermetic seal, TE cooler
|
Responsività (mA/W) @λ(nm)
1000 @ 1550
|
Tipologia
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|
Half Angle (deg)
-
|
Peak sens. wavelenght (nm)
1600
|
Sensitive Area (mm)
0.86 x 0.86
|
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|
Discontinued
|
KPDEH16C OPtical Communication Devices, InGaAs Photodiodes, Fotodiodo 25GHz |
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Tipologia
InGaAs Photodiodes
|
Caratteristiche
High speed
|
Dark current Tipica
0.5nA @ 2V
|
|||||
|
Discontinued
|
KPDEH16DC Optical Communication Devices, InGaAs Photodiodes, Fotodiodo 25GHz |
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Tipologia
InGaAs Photodiodes
|
Caratteristiche
High speed
|
Dark current Tipica
0.5nA @ 2V
|
|||||
|
Discontinued
|
KPDEH16DLC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Tipologia
InGaAs Photodiodes
|
Caratteristiche
High speed
|
Dark current Tipica
0.5nA @ 2V
|
|||||
|
Discontinued
|
KPDEH16QC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Tipologia
InGaAs Photodiodes
|
Caratteristiche
High speed
|
Dark current Tipica
0.5nA @ 2V
|
|||||
|
Discontinued
|
KPDF030F24-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsività (mA/W) @λ(nm)
1.1 @ 2200
|
Sensitive Area (µmɸ)
300
|
Sensitive Wavelenght (nm)
1200 - 2500
|
Tipologia
InGaAs NIR Photodiodes
|
|||||
|
Discontinued
|
KPDG006HAn Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs Fotodiodo alta velocità |
Package
Chip
|
Sensitive Area (µmɸ)
60
|
Tipologia
GaAs Photodiodes
|
Caratteristiche
Flip-Chip
|
Dark current Tipica
30pA @ 2V
|
|||||
|
Discontinued
|
KPDG008 Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs Fotodiodo |
Package
Hermetic sealed, Pigtail
|
Sensitive Area (µmɸ)
80
|
Tipologia
GaAs Photodiodes
|
Caratteristiche
GaAs PD
|
Dark current Tipica
30pA @ 5V
|
|||||
|
Discontinued
|
KPDG020 Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs Fotodiodo alta velocità |
Package
Chip
|
Sensitive Area (µmɸ)
200
|
Tipologia
GaAs Photodiodes
|
Caratteristiche
Surface illuminated
|
Dark current Tipica
2.5pA @ 2V
|