Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

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Prodotto	Descrizione	Bit Rate (bps)	Caratteristiche	Package	Sensibilità Ottica (dBm), Typ.	Tipologia	Half Angle (deg)	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Photo Current Vce = 5 V
Confronta	KPGX2GK-LR33S Kyosemi, Optical Communication Devices, 2.5Gbps and 4Gbps GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel	Bit Rate (bps) 2.5G	Caratteristiche GaAs PD-TIA	Package LC-ROSA	Sensibilità Ottica (dBm), Typ. -20 @ 3.3V	Tipologia GaAs PD-TIA Receivers
Confronta	KPGX4G-LR33S Kyosemi, Optical Communication Devices, 2.5Gbps and 4Gbps GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel	Bit Rate (bps) 4G	Caratteristiche GaAs PD-TIA	Package LC-ROSA	Sensibilità Ottica (dBm), Typ. -17 @ 3.3V	Tipologia GaAs PD-TIA Receivers
Discontinued Confronta	KPD101M31 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 plastic mold		Tipologia Silicon Photodiodes	Half Angle (deg) 60	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 30	Short circuit current (lx) 1000
Discontinued Confronta	KPD101M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 plastic mold		Tipologia Silicon Photodiodes	Half Angle (deg) 90	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 16	Short circuit current (lx) 1000
Discontinued Confronta	KPD104M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 plastic mold		Tipologia Silicon Photodiodes	Half Angle (deg) 70	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 10	Short circuit current (lx) 1000
Discontinued Confronta	KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi			Package ϕ3 plastic mold		Tipologia Silicon Phototransistors	Half Angle (deg) 60	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 7 (mA) 1000 (lx)
Discontinued Confronta	KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi			Package ϕ3 plastic mold		Tipologia Silicon Phototransistors	Half Angle (deg) 90	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 4 (mA) 1000 (lx)