Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

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Prodotto	Descrizione	Lunghezza d'onda	Output	Package	Tipologia	Half Angle (deg)	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (mA/W) @λ(nm)	Responsività (mA/W) @λ(nm)	Sensitive Area (µmɸ)	Sensitive Wavelenght (nm)
Confronta	GUVB-S11SD Genicom - Fotodiodo UV al nitruro di gallio di alluminio	Lunghezza d'onda 240-320 nm	Output Corrente	Package SMD 3528	Tipologia AlGaN Photodiodes
Confronta	GVBL-S12SD Genicom - Fotodiodo UV al nitruro di gallio indio	Lunghezza d'onda 345-450 nm	Output Corrente	Package SMD 3528	Tipologia InGaN Photodiodes
Confronta	GVGR-S11SD Genicom - Fotodiodo UV al nitruro di gallio indio	Lunghezza d'onda 295-490 nm	Output Corrente	Package SMD 3528	Tipologia InGaN Photodiodes
Confronta	KPDU400F-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi			Package TO-5, hermetic seal	Tipologia Silicon UV Sensors	Half Angle (deg) 70	Peak sens. wavelenght (nm) 254	Sensitive Area (mm) 4 x 4	Short circuit current (mA/W) @λ(nm) 30 @ 254
Confronta	KPDU400QW-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi			Package TO-5, hermetic seal	Tipologia Silicon UV Sensors	Half Angle (deg) 70	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 4 x 4	Short circuit current (mA/W) @λ(nm) 120 @ 365
Confronta	KPDW400H-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi			Package TO-5, hermetic seal	Tipologia Silicon UV Sensors	Half Angle (deg) 70	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 4 x 4	Short circuit current (mA/W) @λ(nm) 115 @ 365
Discontinued Confronta	KPDE300 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi			Package TO-5, hermetic seal	Tipologia InGaAs NIR Photodiodes					Responsività (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Area (µmɸ) 3000	Sensitive Wavelenght (nm) 900 - 1700