Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Caratteristiche | Dark current Tipica | Package | Sensitive Area (µmɸ) | Tipologia | Responsività (mA/W) @λ(nm) | Sensitive Wavelenght (nm) |
|---|---|---|---|---|---|---|---|---|
|
KPDE030-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs Fotodiodo |
Caratteristiche
Mini can
|
Dark current Tipica
600pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
300
|
Tipologia
InGaAs Photodiodes
|
||
|
KPDE030SA-TU Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità |
Caratteristiche
Mini can pigtail
|
Dark current Tipica
600pA (max) @ 5V
|
Package
Mini can pigtail
|
Sensitive Area (µmɸ)
300
|
Tipologia
InGaAs Photodiodes
|
||
|
KPDF030F22-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Sensitive Area (µmɸ)
300
|
Tipologia
InGaAs NIR Photodiodes
|
Responsività (mA/W) @λ(nm)
1.2 @ 1950
|
Sensitive Wavelenght (nm)
1200 - 2300
|
||
|
KPDF030F26-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Sensitive Area (µmɸ)
300
|
Tipologia
InGaAs NIR Photodiodes
|
Responsività (mA/W) @λ(nm)
1.2 @ 2200
|
Sensitive Wavelenght (nm)
1200 - 2700
|
||
|
Discontinued
|
KPDE030 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
Hermetic sealed, Pigtail
|
Sensitive Area (µmɸ)
300
|
Tipologia
InGaAs NIR Photodiodes
|
Responsività (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Wavelenght (nm)
900 - 1700
|
||
|
Discontinued
|
KPDE0301M51 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Sensitive Area (µmɸ)
300
|
Tipologia
InGaAs NIR Photodiodes
|
Responsività (mA/W) @λ(nm)
0.9 @ 1550
|
Sensitive Wavelenght (nm)
900 - 1700
|
||
|
Discontinued
|
KPDE030SL Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità |
Caratteristiche
L-band
|
Dark current Tipica
100pA @ 5V
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
300
|
Tipologia
InGaAs Photodiodes
|
||
|
Discontinued
|
KPDF030F24-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Sensitive Area (µmɸ)
300
|
Tipologia
InGaAs NIR Photodiodes
|
Responsività (mA/W) @λ(nm)
1.1 @ 2200
|
Sensitive Wavelenght (nm)
1200 - 2500
|