Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (mA/W) @λ(nm) | Tipologia | Responsività (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) |
|---|---|---|---|---|---|---|---|---|---|---|
|
KPDU400F-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Half Angle (deg)
70
|
Package
TO-5, hermetic seal
|
Peak sens. wavelenght (nm)
254
|
Sensitive Area (mm)
4 x 4
|
Short circuit current (mA/W) @λ(nm)
30 @ 254
|
Tipologia
Silicon UV Sensors
|
|||
|
KPDU400QW-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Half Angle (deg)
70
|
Package
TO-5, hermetic seal
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
4 x 4
|
Short circuit current (mA/W) @λ(nm)
120 @ 365
|
Tipologia
Silicon UV Sensors
|
|||
|
KPDW400H-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Half Angle (deg)
70
|
Package
TO-5, hermetic seal
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
4 x 4
|
Short circuit current (mA/W) @λ(nm)
115 @ 365
|
Tipologia
Silicon UV Sensors
|
|||
|
Discontinued
|
KPDE300 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-5, hermetic seal
|
Tipologia
InGaAs NIR Photodiodes
|
Responsività (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Area (µmɸ)
3000
|
Sensitive Wavelenght (nm)
900 - 1700
|