Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Chip Material | Half Angle (deg) | Lunghezza D'onda (nm) | Package | Potenza di Uscita @If(mA) | Potenza di Uscita (mW) | Tipologia | Peak sens. wavelenght (nm) | Photo Current Vce = 5 V | Sensitive Area (mm) |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
KED353KDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
42
|
Lunghezza D'onda (nm)
870
|
Package
TO-18, epoxy lens
|
Potenza di Uscita @If(mA)
20
|
Potenza di Uscita (mW)
6
|
Tipologia
Infrared LEDs
|
|||
|
Discontinued
|
KPT801H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Tipologia
Silicon Phototransistors
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
2 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
||||
|
Discontinued
|
KPT801HB Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Tipologia
Silicon Phototransistors
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
3 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
||||
|
Discontinued
|
KPT811H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Tipologia
Silicon Phototransistors
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
2 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|