Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

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Prodotto	Descrizione	Lunghezza d'onda	Output	Package	Tipologia	Half Angle (deg)	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Photo Current Vce = 5 V
Discontinued Confronta	GUVC-S40GD Genicom - Fotodiodo UV al nitruro di gallio di alluminio	Lunghezza d'onda 220-280 nm	Output Corrente	Package CSP	Tipologia AlGaN Photodiodes
Discontinued Confronta	KPD101M31 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 plastic mold	Tipologia Silicon Photodiodes	Half Angle (deg) 60	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 30	Short circuit current (lx) 1000
Discontinued Confronta	KPD101M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 plastic mold	Tipologia Silicon Photodiodes	Half Angle (deg) 90	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 16	Short circuit current (lx) 1000
Discontinued Confronta	KPD104M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 plastic mold	Tipologia Silicon Photodiodes	Half Angle (deg) 70	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 10	Short circuit current (lx) 1000
Discontinued Confronta	KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi			Package ϕ3 plastic mold	Tipologia Silicon Phototransistors	Half Angle (deg) 60	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 7 (mA) 1000 (lx)
Discontinued Confronta	KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi			Package ϕ3 plastic mold	Tipologia Silicon Phototransistors	Half Angle (deg) 90	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 4 (mA) 1000 (lx)