Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Tipologia | Responsività (mA/W) @λ(nm) | Sensitive Wavelenght (nm) |
|---|---|---|---|---|---|---|---|---|---|---|
|
Discontinued
|
KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
ϕ 6,5 ceramic, epoxy lens
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
70
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
||
|
Discontinued
|
KPDU31S1A-B1 Photodevices for Sensors - Detectors, GaN UV Sensors, Kyosemi |
Half Angle (deg)
-
|
Package
Ceramic, Surface mount
|
Sensitive Area (mm)
0.07
|
Tipologia
GaN UV Sensors
|
Responsività (mA/W) @λ(nm)
80 @ 300
|
Sensitive Wavelenght (nm)
200 - 330
|
|||
|
Discontinued
|
KPDU31S1A-Q1 Photodevices for Sensors - Detectors, GaN UV Sensors, Kyosemi |
Half Angle (deg)
-
|
Package
Ceramic, Surface mount
|
Sensitive Area (mm)
0.07
|
Tipologia
GaN UV Sensors
|
Responsività (mA/W) @λ(nm)
75 @ 300
|
Sensitive Wavelenght (nm)
200 - 330
|