Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

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Prodotto	Descrizione	Caratteristiche	Dark current Tipica	Package	Sensitive Area (µmɸ)	Tipologia	Bit Rate (bps)	Sensibilità Ottica (dBm), Typ.	Responsività (mA/W) @λ(nm)	Sensitive Wavelenght (nm)	Half Angle (deg)	Sensitive Area (mm)
Confronta	KPDE004 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Low Dark Current High Speed	Caratteristiche High speed	Dark current Tipica 20pA @ 5V	Package Hermetic sealed, Pigtail	Sensitive Area (µmɸ) 45	Tipologia InGaAs Photodiodes
Confronta	KPDE006 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Low Dark Current High Speed	Caratteristiche High speed	Dark current Tipica 30pA @ 2V	Package Hermetic sealed, Pigtail	Sensitive Area (µmɸ) 60	Tipologia InGaAs Photodiodes
Confronta	KPDE008 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Low Dark Current High Speed	Caratteristiche High speed	Dark current Tipica 30pA @ 5V	Package Hermetic sealed, Pigtail	Sensitive Area (µmɸ) 80	Tipologia InGaAs Photodiodes
Confronta	KPDE020 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità	Caratteristiche High speed	Dark current Tipica 50pA @ 5V	Package Hermetic sealed, Pigtail	Sensitive Area (µmɸ) 200	Tipologia InGaAs Photodiodes
Confronta	KPDX1GK Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, 1.25Gbps InGaAs PIN PD-TIA	Caratteristiche Preamplified receivers		Package Hermetic sealed, Pigtail		Tipologia InGaAs PD-TIA Receivers	Bit Rate (bps) 1.25G	Sensibilità Ottica (dBm), Typ. -32 @ 3.3V
Discontinued Confronta	KPDE030 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi			Package Hermetic sealed, Pigtail	Sensitive Area (µmɸ) 300	Tipologia InGaAs NIR Photodiodes			Responsività (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Wavelenght (nm) 900 - 1700
Discontinued Confronta	KPDE086S Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi			Package Hermetic sealed, Pigtail	Sensitive Area (µmɸ) 860x860	Tipologia InGaAs NIR Photodiodes			Responsività (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Wavelenght (nm) 900 - 1700
Discontinued Confronta	KPDG008 Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs Fotodiodo	Caratteristiche GaAs PD	Dark current Tipica 30pA @ 5V	Package Hermetic sealed, Pigtail	Sensitive Area (µmɸ) 80	Tipologia GaAs Photodiodes
Discontinued Confronta	KPDU31S1A-B1 Photodevices for Sensors - Detectors, GaN UV Sensors, Kyosemi			Package Ceramic, Surface mount		Tipologia GaN UV Sensors			Responsività (mA/W) @λ(nm) 80 @ 300	Sensitive Wavelenght (nm) 200 - 330	Half Angle (deg) -	Sensitive Area (mm) 0.07
Discontinued Confronta	KPDU31S1A-Q1 Photodevices for Sensors - Detectors, GaN UV Sensors, Kyosemi			Package Ceramic, Surface mount		Tipologia GaN UV Sensors			Responsività (mA/W) @λ(nm) 75 @ 300	Sensitive Wavelenght (nm) 200 - 330	Half Angle (deg) -	Sensitive Area (mm) 0.07