Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Tipologia | Caratteristiche | Dark current Tipica | Sensitive Area (µmɸ) |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
150
|
Package
Side view, plastic mold
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
78
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
|||
|
KPDE10GC-V2 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo 10 Gbps |
Package
Chip
|
Tipologia
InGaAs Photodiodes
|
Caratteristiche
High speed
|
Dark current Tipica
10pA @ 5V
|
Sensitive Area (µmɸ)
28
|
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|
KPEIMC-100 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità |
Package
Chip
|
Tipologia
InGaAs Photodiodes
|
Caratteristiche
Edge illuminated
|
Dark current Tipica
35pA @ 5V
|
Sensitive Area (µmɸ)
80x100
|
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|
KPEIMC-UDCOM Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità |
Package
Chip
|
Tipologia
InGaAs Photodiodes
|
Caratteristiche
Edge illuminated
|
Dark current Tipica
50pA @ 5V
|
Sensitive Area (µmɸ)
100x120
|
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|
KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode |
Package
Chip
|
Tipologia
Si PIN Photodiodes
|
Caratteristiche
Si high speed
|
Dark current Tipica
0.8nA @ 10V
|
Sensitive Area (µmɸ)
1500
|
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|
Discontinued
|
KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità |
Package
Chip
|
Tipologia
InGaAs Photodiodes
|
Caratteristiche
Array
|
Dark current Tipica
30pA @ 5V
|
Sensitive Area (µmɸ)
50
|
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|
Discontinued
|
KPDEH16C OPtical Communication Devices, InGaAs Photodiodes, Fotodiodo 25GHz |
Package
Chip
|
Tipologia
InGaAs Photodiodes
|
Caratteristiche
High speed
|
Dark current Tipica
0.5nA @ 2V
|
Sensitive Area (µmɸ)
16
|
|||||
|
Discontinued
|
KPDEH16DC Optical Communication Devices, InGaAs Photodiodes, Fotodiodo 25GHz |
Package
Chip
|
Tipologia
InGaAs Photodiodes
|
Caratteristiche
High speed
|
Dark current Tipica
0.5nA @ 2V
|
Sensitive Area (µmɸ)
16
|
|||||
|
Discontinued
|
KPDEH16DLC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Package
Chip
|
Tipologia
InGaAs Photodiodes
|
Caratteristiche
High speed
|
Dark current Tipica
0.5nA @ 2V
|
Sensitive Area (µmɸ)
16
|
|||||
|
Discontinued
|
KPDEH16QC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Package
Chip
|
Tipologia
InGaAs Photodiodes
|
Caratteristiche
High speed
|
Dark current Tipica
0.5nA @ 2V
|
Sensitive Area (µmɸ)
16
|