Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Bit Rate (bps) | Caratteristiche | Package | Sensibilità Ottica (dBm), Typ. | Tipologia | Chip Material | Half Angle (deg) | Lunghezza D'onda (nm) | Potenza di Uscita @If(mA) | Potenza di Uscita (mW) | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KPDXA10G-XMD Kyosemi, Optical Communication Devices, InGaAs APD-TIA Receivers, XMD 10Gbps APD-TIA Receiver |
Bit Rate (bps)
10G
|
Caratteristiche
APD-TIA
|
Package
Hermetic sealed, Pigtail, LC-ROSA
|
Sensibilità Ottica (dBm), Typ.
-28 @ 46V
|
Tipologia
InGaAs APD-TIA Receivers
|
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|
Discontinued
|
KED351CDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Package
ϕ3 ceramic, epoxy lens
|
Tipologia
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
145
|
Lunghezza D'onda (nm)
870
|
Potenza di Uscita @If(mA)
20
|
Potenza di Uscita (mW)
6
|
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|
Discontinued
|
KED351RCD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Package
ϕ3 ceramic, epoxy lens
|
Tipologia
Red LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
160
|
Lunghezza D'onda (nm)
660
|
Potenza di Uscita @If(mA)
20
|
Potenza di Uscita (mW)
3.2
|
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|
Discontinued
|
KED501C Kyosemi, Photodevices for Sensors - Emitters, GaAs Infrared LED |
Package
ϕ3 ceramic, epoxy lens
|
Tipologia
Infrared LEDs
|
Chip Material
GaAs
|
Half Angle (deg)
170
|
Lunghezza D'onda (nm)
950
|
Potenza di Uscita @If(mA)
40
|
Potenza di Uscita (mW)
4.5
|
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|
Discontinued
|
KED602C Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Package
ϕ3 ceramic, epoxy lens
|
Tipologia
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
110
|
Lunghezza D'onda (nm)
890
|
Potenza di Uscita @If(mA)
40
|
Potenza di Uscita (mW)
6
|
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|
Discontinued
|
KPD1201C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
ϕ3 ceramic, epoxy lens
|
Tipologia
Silicon Photodiodes
|
Half Angle (deg)
145
|
Peak sens. wavelenght (nm)
880
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
12
|
Short circuit current (lx)
1000
|
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|
Discontinued
|
KPDXA10G Kyosemi, Optical Communication Devices, InGaAs APD-TIA Receivers, 10Gbps APD-TIA Receiver |
Bit Rate (bps)
10G
|
Caratteristiche
APD-TIA
|
Package
Hermetic sealed, Pigtail, LC-ROSA
|
Sensibilità Ottica (dBm), Typ.
-28 @ 46V
|
Tipologia
InGaAs APD-TIA Receivers
|
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|
Discontinued
|
KPDXA1GK Kyosemi, Optical Communication Devices, InGaAs APD-TIA Receivers, 1.25Gbps APD-TIA Receiver |
Bit Rate (bps)
1.25G
|
Caratteristiche
APD-TIA
|
Package
Hermetic sealed, Pigtail, LC-ROSA
|
Sensibilità Ottica (dBm), Typ.
-38 @ 45V
|
Tipologia
InGaAs APD-TIA Receivers
|
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|
Discontinued
|
KPDXA2GK Kyosemi, Optical Communication Devices, InGaAs APD-TIA Receivers, 2.5Gbps APD-TIA Receiver |
Bit Rate (bps)
2.5G
|
Caratteristiche
APD-TIA
|
Package
Hermetic sealed, Pigtail, LC-ROSA
|
Sensibilità Ottica (dBm), Typ.
-35 @ 45V
|
Tipologia
InGaAs APD-TIA Receivers
|
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|
Discontinued
|
KPDXA3G Kyosemi, Optical Communication Devices, InGaAs APD-TIA Receivers, InGaAs APD-TIA |
Bit Rate (bps)
3G
|
Caratteristiche
APD-TIA
|
Package
Hermetic sealed, Pigtail, LC-ROSA
|
Sensibilità Ottica (dBm), Typ.
-32 @ 46V
|
Tipologia
InGaAs APD-TIA Receivers
|