Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Bit Rate (bps) | Caratteristiche | Package | Sensibilità Ottica (dBm), Typ. | Tipologia | Half Angle (deg) | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Responsività (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KPGX2GK-LR33S Kyosemi, Optical Communication Devices, 2.5Gbps and 4Gbps GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel |
Bit Rate (bps)
2.5G
|
Caratteristiche
GaAs PD-TIA
|
Package
LC-ROSA
|
Sensibilità Ottica (dBm), Typ.
-20 @ 3.3V
|
Tipologia
GaAs PD-TIA Receivers
|
||||||||
|
KPGX4G-LR33S Kyosemi, Optical Communication Devices, 2.5Gbps and 4Gbps GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel |
Bit Rate (bps)
4G
|
Caratteristiche
GaAs PD-TIA
|
Package
LC-ROSA
|
Sensibilità Ottica (dBm), Typ.
-17 @ 3.3V
|
Tipologia
GaAs PD-TIA Receivers
|
||||||||
|
Discontinued
|
KPD101M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Tipologia
Silicon Photodiodes
|
Half Angle (deg)
76
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
19
|
Short circuit current (lx)
1000
|
||||||
|
Discontinued
|
KPD104M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Tipologia
Silicon Photodiodes
|
Half Angle (deg)
40
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
55
|
Short circuit current (lx)
1000
|
||||||
|
Discontinued
|
KPD151M53 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Tipologia
Silicon Photodiodes
|
Half Angle (deg)
130
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
1.25 x 1.25
|
Short circuit current (µA)
16
|
Short circuit current (lx)
1000
|
||||||
|
Discontinued
|
KPDE0301M51 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Tipologia
InGaAs NIR Photodiodes
|
Responsività (mA/W) @λ(nm)
0.9 @ 1550
|
Sensitive Area (µmɸ)
300
|
Sensitive Wavelenght (nm)
900 - 1700
|