Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

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Prodotto	Descrizione	Chip Material	Half Angle (deg)	Lunghezza D'onda (nm)	Package	Potenza di Uscita @If(mA)	Potenza di Uscita (mW)	Tipologia	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Photo Current Vce = 5 V
Discontinued Confronta	KED365US1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led	Chip Material GaN	Half Angle (deg) 100	Lunghezza D'onda (nm) 367	Package Surface mount, ceramic	Potenza di Uscita @If(mA) 20	Potenza di Uscita (mW) 2.1	Tipologia Ultra Violet LEDs
Discontinued Confronta	KED373US1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN GaN UV LED	Chip Material InGaN	Half Angle (deg) 100	Lunghezza D'onda (nm) 373	Package Surface mount, ceramic	Potenza di Uscita @If(mA) 20	Potenza di Uscita (mW) 1.3	Tipologia Ultra Violet LEDs
Discontinued Confronta	KED405UMS1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Violet LED	Chip Material InGaN	Half Angle (deg) 130	Lunghezza D'onda (nm) 405	Package Surface mount, ceramic	Potenza di Uscita @If(mA) 20	Potenza di Uscita (mW) 13	Tipologia Ultra Violet LEDs
Discontinued Confronta	KPD101M31 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 60		Package ϕ3 plastic mold			Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 30	Short circuit current (lx) 1000
Discontinued Confronta	KPD101M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 90		Package ϕ3 plastic mold			Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 16	Short circuit current (lx) 1000
Discontinued Confronta	KPD104M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 70		Package ϕ3 plastic mold			Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 10	Short circuit current (lx) 1000
Discontinued Confronta	KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi		Half Angle (deg) 60		Package ϕ3 plastic mold			Tipologia Silicon Phototransistors	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 7 (mA) 1000 (lx)
Discontinued Confronta	KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi		Half Angle (deg) 90		Package ϕ3 plastic mold			Tipologia Silicon Phototransistors	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 4 (mA) 1000 (lx)