Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

Cambia visualizzazione

Prodotto	Descrizione	Chip Material	Half Angle (deg)	Lunghezza D'onda (nm)	Package	Potenza di Uscita @If(mA)	Potenza di Uscita (mW)	Tipologia	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Photo Current Vce = 5 V
Confronta	KED050CXK Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED	Chip Material GaAIAs	Half Angle (deg) 125	Lunghezza D'onda (nm) 850	Package TO-46, epoxy lens	Potenza di Uscita @If(mA) 50	Potenza di Uscita (mW) 5	Tipologia Point Source LEDs
Discontinued Confronta	KEDE1458K Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED	Chip Material InGaAsP	Half Angle (deg) 110	Lunghezza D'onda (nm) 1450	Package TO-46, epoxy lens	Potenza di Uscita @If(mA) 50	Potenza di Uscita (mW) 3	Tipologia Infrared LEDs
Discontinued Confronta	KPD101M31 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 60		Package ϕ3 plastic mold			Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 30	Short circuit current (lx) 1000
Discontinued Confronta	KPD101M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 90		Package ϕ3 plastic mold			Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 16	Short circuit current (lx) 1000
Discontinued Confronta	KPD104M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 70		Package ϕ3 plastic mold			Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 10	Short circuit current (lx) 1000
Discontinued Confronta	KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi		Half Angle (deg) 60		Package ϕ3 plastic mold			Tipologia Silicon Phototransistors	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 7 (mA) 1000 (lx)
Discontinued Confronta	KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi		Half Angle (deg) 90		Package ϕ3 plastic mold			Tipologia Silicon Phototransistors	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 4 (mA) 1000 (lx)