Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

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Prodotto	Descrizione	Chip Material	Colore	Colore Resina	Diametro Esterno (mm)	Half Angle (deg)	Intensità Luminosa (mcd)	Lunghezza D'onda (nm)	Package	Potenza di Uscita @If(mA)	Potenza di Uscita (mW)	Tensione Diretta Max. (V)	Tensione Diretta Tipica (V)	Tipologia	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Photo Current Vce = 5 V
Discontinued Confronta	KED591M52 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, colore Giallo, Kyosemi Photodevices for sensors	Chip Material AIGaInP	Colore Giallo	Colore Resina Clear	Diametro Esterno (mm) ⌀5	Half Angle (deg) 30	Intensità Luminosa (mcd) 1800	Lunghezza D'onda (nm) 590	Package M52	Potenza di Uscita @If(mA) 20	Potenza di Uscita (mW) 1.5	Tensione Diretta Max. (V) 2.4	Tensione Diretta Tipica (V) 2.1	Tipologia Plastic Mold LEDs for Sensors
Discontinued Confronta	KED861M52 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, colore Infrarosso, Kyosemi Photodevices for sensors	Chip Material GaAIAs	Colore Infrared	Colore Resina Clear	Diametro Esterno (mm) ⌀5	Half Angle (deg) 10	Intensità Luminosa (mcd) -	Lunghezza D'onda (nm) 865	Package M52	Potenza di Uscita @If(mA) 50	Potenza di Uscita (mW) 22	Tensione Diretta Max. (V) 1.8	Tensione Diretta Tipica (V) 1.5	Tipologia Plastic Mold LEDs for Sensors
Discontinued Confronta	KEDE1451M52 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, colore Infrarosso, Kyosemi Photodevices for sensors	Chip Material InGaAsP	Colore Infrared	Colore Resina Clear	Diametro Esterno (mm) ⌀5	Half Angle (deg) 10	Intensità Luminosa (mcd) -	Lunghezza D'onda (nm) 1450	Package M52	Potenza di Uscita @If(mA) 50	Potenza di Uscita (mW) 2.2	Tensione Diretta Max. (V) 1.3	Tensione Diretta Tipica (V) 0.8	Tipologia Plastic Mold LEDs for Sensors
Discontinued Confronta	KPD101M31 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi					Half Angle (deg) 60			Package ϕ3 plastic mold					Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 30	Short circuit current (lx) 1000
Discontinued Confronta	KPD101M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi					Half Angle (deg) 90			Package ϕ3 plastic mold					Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 16	Short circuit current (lx) 1000
Discontinued Confronta	KPD104M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi					Half Angle (deg) 70			Package ϕ3 plastic mold					Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 10	Short circuit current (lx) 1000
Discontinued Confronta	KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi					Half Angle (deg) 60			Package ϕ3 plastic mold					Tipologia Silicon Phototransistors	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 7 (mA) 1000 (lx)
Discontinued Confronta	KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi					Half Angle (deg) 90			Package ϕ3 plastic mold					Tipologia Silicon Phototransistors	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 4 (mA) 1000 (lx)