Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Bit Rate (bps) | Caratteristiche | Package | Sensibilità Ottica (dBm), Typ. | Tipologia | Half Angle (deg) | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Responsività (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KPDX10G-XMD Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, XMD 10Gbps PIN-TIA Receiver |
Bit Rate (bps)
10G
|
Caratteristiche
ROSA
|
Package
InGaAs ROSA with FPC (Flexible-Printed Circuit)
|
Sensibilità Ottica (dBm), Typ.
-18 @ 3.3V
|
Tipologia
InGaAs PD-TIA Receivers
|
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|
Discontinued
|
KPD101M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Tipologia
Silicon Photodiodes
|
Half Angle (deg)
76
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
19
|
Short circuit current (lx)
1000
|
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|
Discontinued
|
KPD104M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Tipologia
Silicon Photodiodes
|
Half Angle (deg)
40
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
55
|
Short circuit current (lx)
1000
|
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|
Discontinued
|
KPD151M53 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Tipologia
Silicon Photodiodes
|
Half Angle (deg)
130
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
1.25 x 1.25
|
Short circuit current (µA)
16
|
Short circuit current (lx)
1000
|
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|
Discontinued
|
KPDE0301M51 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Tipologia
InGaAs NIR Photodiodes
|
Responsività (mA/W) @λ(nm)
0.9 @ 1550
|
Sensitive Area (µmɸ)
300
|
Sensitive Wavelenght (nm)
900 - 1700
|