Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

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Prodotto	Descrizione	Caratteristiche	Dark current Tipica	Package	Sensitive Area (µmɸ)	Tipologia	Half Angle (deg)	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)
Confronta	KPA4-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità	Caratteristiche Array	Dark current Tipica 80pA @ 5V	Package 4ch array with 250µm pitch	Sensitive Area (µmɸ) 80	Tipologia InGaAs Photodiodes
Confronta	KPA8-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità	Caratteristiche Array	Dark current Tipica 80pA @ 5V	Package 8ch array with 250µm pitch	Sensitive Area (µmɸ) 80	Tipologia InGaAs Photodiodes
Confronta	KPC8-T Photodevices for Sensors - Detectors, InGaAs Photovolotaic Power Converter, Kyosemi					Tipologia Thermoelectrically Cooled InGaAs-InAs Photodiodes
Confronta	KPD1201H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package TO-18, hermetic seal		Tipologia Silicon Photodiodes	Half Angle (deg) 23	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 60	Short circuit current (lx) 1000
Confronta	KPD1203H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package TO-18, hermetic seal		Tipologia Silicon Photodiodes	Half Angle (deg) 100	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 8	Short circuit current (lx) 1000
Confronta	KPD1203K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package TO-18, epoxy lens		Tipologia Silicon Photodiodes	Half Angle (deg) 140	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 11	Short circuit current (lx) 1000
Confronta	KPD1801H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package TO-18, hermetic seal		Tipologia Silicon Photodiodes	Half Angle (deg) 34	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 70	Short circuit current (lx) 1000
Confronta	KPD1803H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package TO-18, hermetic seal		Tipologia Silicon Photodiodes	Half Angle (deg) 95	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 17	Short circuit current (lx) 1000
Confronta	KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package TO-18, epoxy lens		Tipologia Silicon Photodiodes	Half Angle (deg) 120	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 24	Short circuit current (lx) 1000
Confronta	KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package Side view, plastic mold		Tipologia Silicon Photodiodes	Half Angle (deg) 150	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 78	Short circuit current (lx) 1000