Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology | Colour | Resin colour | External Diameter | Light intensity (mcd) | Max Direct Voltage (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Discontinued
|
KED501C Kyosemi, Photodevices for Sensors - Emitters, GaAs Infrared LED |
Chip Material
GaAs
|
Half Angle (deg)
170
|
Wavelength (nm)
950
|
Package
ϕ3 ceramic, epoxy lens
|
Output Power @lf(mA)
40
|
Output Power (mW)
4.5
|
Typology
Infrared LEDs
|
|||||
|
Discontinued
|
KED621M32 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Red color, Kyosemi Photodevices for sensors |
Chip Material
AIGaInP
|
Half Angle (deg)
70
|
Wavelength (nm)
625
|
Package
M32
|
Output Power @lf(mA)
20
|
Output Power (mW)
4.5
|
Typology
Plastic Mold LEDs for Sensors
|
Colour
Red
|
Resin colour
Clear
|
External Diameter
⌀3
|
Light intensity (mcd)
300
|
Max Direct Voltage (V)
2.4
|
|
Discontinued
|
KED661T1 Kyosemi, Photodevices for Sensors - Emitters, AIGaInP Red LED |
Chip Material
AIGaInP
|
Half Angle (deg)
145
|
Wavelength (nm)
660
|
Package
Surface mount
|
Output Power @lf(mA)
20
|
Output Power (mW)
14
|
Typology
Red LEDs
|
|||||
|
Discontinued
|
KED661T2 Kyosemi, Photodevices for Sensors - Emitters, AIGaInP Red LED |
Chip Material
AIGaInP
|
Half Angle (deg)
145
|
Wavelength (nm)
660
|
Package
Surface mount
|
Output Power @lf(mA)
20
|
Output Power (mW)
14
|
Typology
Red LEDs
|