Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Amplification factor | Package | Peak sens. wavelenght (nm) | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Typology | Sensitive Wavelenght (nm) |
|---|---|---|---|---|---|---|---|---|
|
KPDA020P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
200
|
Typology
Silicon Avalanche Photodiodes
|
|
|
KPDA050P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
|
|
KPDA100P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
1000
|
Typology
Silicon Avalanche Photodiodes
|
|
|
Discontinued
|
KPDF030F24-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.1 @ 2200
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs NIR Photodiodes
|
Sensitive Wavelenght (nm)
1200 - 2500
|