Fotodiodi - Fototransistor
Fotodiodi - Fototransistor
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Tipologia |
|---|---|---|---|---|---|---|---|---|
|
Discontinued
|
KPID1301C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
145
|
Package
ϕ3 ceramic, epoxy lens
|
Peak sens. wavelenght (nm)
900
|
Sensitive Area (mm)
1.10 x 1.10
|
Short circuit current (µA)
12
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|