Fotodiodi - Fototransistor
Fotodiodi - Fototransistor
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Tipologia |
|---|---|---|---|---|---|---|---|---|
|
|
KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
TO-18, epoxy lens
|
Peak sens. wavelenght (nm)
840
|
Sensitive Area (mm)
1.30 x 1.60
|
Short circuit current (µA)
24
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|