Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Typology | Photo Current Vce = 5 V |
|---|---|---|---|---|---|---|---|---|
|
KPID1301H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
28
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
900
|
Sensitive Area (mm)
1.10 x 1.10
|
Short circuit current (µA)
60
|
Typology
Silicon Photodiodes
|
|
|
Discontinued
|
KPD101M31 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
60
|
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
30
|
Typology
Silicon Photodiodes
|
|
|
Discontinued
|
KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
60
|
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
800
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|
Photo Current Vce = 5 V
7 (mA) 1000 (lx)
|