Fotodiodi - Fototransistor | Tecnosens S.p.a. Sensori, Sensori optoelettronici

Fotodiodi - Fototransistor

Cambia visualizzazione

Prodotto	Descrizione	Half Angle (deg)	Package	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Tipologia	Fattore di Amplicazione	Responsività (mA/W) @λ(nm)	Sensitive Area (µmɸ)
Discontinued Confronta	KPD101M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 76	Package ϕ5 plastic mold	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 19	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Discontinued Confronta	KPD101T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 140	Package Surface mount	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 6	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Discontinued Confronta	KPD104M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 70	Package ϕ3 plastic mold	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 10	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Discontinued Confronta	KPD104M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 40	Package ϕ5 plastic mold	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 55	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Discontinued Confronta	KPD1201C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 145	Package ϕ3 ceramic, epoxy lens	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 12	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Discontinued Confronta	KPD151M53 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 130	Package ϕ5 plastic mold	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 1.25 x 1.25	Short circuit current (µA) 16	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Discontinued Confronta	KPD151T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 140	Package Surface mount	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 1.25 x 1.25	Short circuit current (µA) 15	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Discontinued Confronta	KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 120	Package ϕ 6,5 ceramic, epoxy lens	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 70	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Discontinued Confronta	KPDA020-H8 Kyosemi Photodevices for sensors - Detectors, Fotodiodi Effetto Valanga, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670				Tipologia Silicon Avalanche Photodiodes	Fattore di Amplicazione 150	Responsività (mA/W) @λ(nm) 350 @ 800	Sensitive Area (µmɸ) 200
Discontinued Confronta	KPDA050-H8 Kyosemi Photodevices for sensors - Detectors, Fotodiodi Effetto Valanga, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670				Tipologia Silicon Avalanche Photodiodes	Fattore di Amplicazione 150	Responsività (mA/W) @λ(nm) 350 @ 800	Sensitive Area (µmɸ) 500