Fotodiodi - Fototransistor
Fotodiodi - Fototransistor
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Tipologia | Responsività (mA/W) @λ(nm) |
|---|---|---|---|---|---|---|---|---|---|
|
KPD31S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
-
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.80 x 0.80
|
Short circuit current (µA)
22
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
|
|
|
KPD3212 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi |
Half Angle (deg)
-
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
1.5 x 1.0 (per 1ch)
|
Tipologia
Silicon Photodiode Array & Position sensing detector (PSD)
|
Responsività (mA/W) @λ(nm)
16(µA) @ 1000 lx
|
||
|
|
KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
150
|
Package
Side view, plastic mold
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
78
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
|
|
KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
68
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
|
|
Discontinued
|
KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
ϕ 6,5 ceramic, epoxy lens
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
70
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|