Sensori optoelettronici | Tecnosens S.p.a. Sensori

Sensori optoelettronici

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Prodotto	Descrizione	Chip Material	Half Angle (deg)	Lunghezza D'onda (nm)	Package	Potenza di Uscita @If(mA)	Potenza di Uscita (mW)	Tipologia	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Responsività (mA/W) @λ(nm)	Sensitive Area (µmɸ)	Sensitive Wavelenght (nm)
Discontinued Confronta	KED880S4 Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Infrared LED	Chip Material GaAIAs	Half Angle (deg) 130	Lunghezza D'onda (nm) 880	Package Side view compact package	Potenza di Uscita @If(mA) 20	Potenza di Uscita (mW) 2.5	Tipologia Infrared LEDs
Discontinued Confronta	KPD101M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 76		Package ϕ5 plastic mold			Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 19	Short circuit current (lx) 1000
Discontinued Confronta	KPD104M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 40		Package ϕ5 plastic mold			Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 55	Short circuit current (lx) 1000
Discontinued Confronta	KPD151M53 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 130		Package ϕ5 plastic mold			Tipologia Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 1.25 x 1.25	Short circuit current (µA) 16	Short circuit current (lx) 1000
Discontinued Confronta	KPDE0301M51 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi				Package ϕ5 plastic mold			Tipologia InGaAs NIR Photodiodes					Responsività (mA/W) @λ(nm) 0.9 @ 1550	Sensitive Area (µmɸ) 300	Sensitive Wavelenght (nm) 900 - 1700