Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Responsività (mA/W) @λ(nm) | Sensitive Area (mm) | Tipologia | Short circuit current (µA) | Short circuit current (lx) |
|---|---|---|---|---|---|---|---|---|---|
|
KDA16S Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi |
Half Angle (deg)
-
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
900
|
Responsività (mA/W) @λ(nm)
540 @ 850
|
Sensitive Area (mm)
0.74 x 2.0 (per 1ch)
|
Tipologia
Silicon Photodiode Array & Position sensing detector (PSD)
|
||
|
KPID1301H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
28
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
900
|
Sensitive Area (mm)
1.10 x 1.10
|
Tipologia
Silicon Photodiodes
|
Short circuit current (µA)
60
|
Short circuit current (lx)
1000
|
|
|
Discontinued
|
KPID1301C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
145
|
Package
ϕ3 ceramic, epoxy lens
|
Peak sens. wavelenght (nm)
900
|
Sensitive Area (mm)
1.10 x 1.10
|
Tipologia
Silicon Photodiodes
|
Short circuit current (µA)
12
|
Short circuit current (lx)
1000
|