Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Tipologia | Responsività (mA/W) @λ(nm) | Short circuit current (mA/W) @λ(nm) |
|---|---|---|---|---|---|---|---|---|---|---|
|
KPD31S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
-
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.80 x 0.80
|
Short circuit current (µA)
22
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
||
|
|
KPD3212 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi |
Half Angle (deg)
-
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
1.5 x 1.0 (per 1ch)
|
Tipologia
Silicon Photodiode Array & Position sensing detector (PSD)
|
Responsività (mA/W) @λ(nm)
16(µA) @ 1000 lx
|
|||
|
KPDU400QW-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Half Angle (deg)
70
|
Package
TO-5, hermetic seal
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
4 x 4
|
Tipologia
Silicon UV Sensors
|
Short circuit current (mA/W) @λ(nm)
120 @ 365
|
|||
|
KPDW400H-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Half Angle (deg)
70
|
Package
TO-5, hermetic seal
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
4 x 4
|
Tipologia
Silicon UV Sensors
|
Short circuit current (mA/W) @λ(nm)
115 @ 365
|
|||
|
|
KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
150
|
Package
Side view, plastic mold
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
78
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
||
|
KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
68
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
||
|
Discontinued
|
KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
ϕ 6,5 ceramic, epoxy lens
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
70
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|