Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology | Power Supply | Wavelength | Output | Operating temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KED050HQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
7.5
|
Wavelength (nm)
850
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.4
|
Typology
Parallel Beam LEds
|
||||
|
KED050HV Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
6
|
Wavelength (nm)
850
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2
|
Typology
Parallel Beam LEds
|
||||
|
KED109Z-N Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs High Power Infrare LED |
Chip Material
GaAIAs
|
Half Angle (deg)
18
|
Wavelength (nm)
890
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
Typology
Parallel Beam LEds
|
||||
|
KED308HQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
12
|
Wavelength (nm)
870
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
12
|
Typology
Parallel Beam LEds
|
||||
|
KED308HV Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
8
|
Wavelength (nm)
870
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
7
|
Typology
Parallel Beam LEds
|
||||
|
KED358HQ-N Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs High Power Infrare LED |
Chip Material
GaAIAs
|
Half Angle (deg)
11
|
Wavelength (nm)
890
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
Typology
Parallel Beam LEds
|
||||
|
KED358RHDQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Red LED |
Chip Material
GaAIAs
|
Half Angle (deg)
11
|
Wavelength (nm)
660
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
2
|
Typology
Parallel Beam LEds
|
||||
|
Discontinued
|
GUVA-C32SM Genicom - Digital Gallium Nitride UV Photodiode |
Package
COB 2320
|
Typology
GaN Photodiodes
|
Power Supply
2.2-3.6 V
|
Wavelength
220-370 nm
|
Output
I2C
|
Operating temperature
-30 ~ +85 °C
|
|||||
|
Discontinued
|
GUVB-C31SM Genicom - Digital Gallium Nitride UV Photodiode |
Package
COB 2320
|
Typology
GaN Photodiodes
|
Power Supply
2.2-3.6 V
|
Output
I2C
|
Operating temperature
-30 ~ +85 °C
|