Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Package | Peak sens. wavelenght (nm) | Responsivity (mA/W) @λ(nm) | Sensitive Area (mm) | Typology | Chip Material | Half Angle (deg) | Wavelength (nm) | Output Power @lf(mA) | Output Power (mW) |
|---|---|---|---|---|---|---|---|---|---|---|---|
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KDA16S Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi |
Package
Surface mount
|
Peak sens. wavelenght (nm)
900
|
Responsivity (mA/W) @λ(nm)
540 @ 850
|
Sensitive Area (mm)
0.74 x 2.0 (per 1ch)
|
Typology
Silicon Photodiode Array & Position sensing detector (PSD)
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KPD3212 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi |
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Responsivity (mA/W) @λ(nm)
16(µA) @ 1000 lx
|
Sensitive Area (mm)
1.5 x 1.0 (per 1ch)
|
Typology
Silicon Photodiode Array & Position sensing detector (PSD)
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KED351HDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
12
|
Wavelength (nm)
870
|
Output Power @lf(mA)
20
|
Output Power (mW)
4
|
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KED353KDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Package
TO-18, epoxy lens
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
42
|
Wavelength (nm)
870
|
Output Power @lf(mA)
20
|
Output Power (mW)
6
|
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KED601H Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
14
|
Wavelength (nm)
890
|
Output Power @lf(mA)
100
|
Output Power (mW)
9
|
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KED602K Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Package
TO-18, epoxy lens
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
45
|
Wavelength (nm)
890
|
Output Power @lf(mA)
50
|
Output Power (mW)
15
|
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KED604H Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
60
|
Wavelength (nm)
890
|
Output Power @lf(mA)
100
|
Output Power (mW)
11
|
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KEDE1304H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
InGaAsP
|
Half Angle (deg)
80
|
Wavelength (nm)
1300
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|
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KEDE1452H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1450
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.8
|
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KEDE1454H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
InGaAsP
|
Half Angle (deg)
80
|
Wavelength (nm)
1450
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|