Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Typology | Chip Material | Wavelength (nm) | Output Power @lf(mA) | Output Power (mW) |
|---|---|---|---|---|---|---|---|---|---|---|
|
KPDU400F-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Half Angle (deg)
70
|
Package
TO-5, hermetic seal
|
Peak sens. wavelenght (nm)
254
|
Sensitive Area (mm)
4 x 4
|
Typology
Silicon UV Sensors
|
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|
KPDU400QW-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Half Angle (deg)
70
|
Package
TO-5, hermetic seal
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
4 x 4
|
Typology
Silicon UV Sensors
|
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|
KPDW400H-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Half Angle (deg)
70
|
Package
TO-5, hermetic seal
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
4 x 4
|
Typology
Silicon UV Sensors
|
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|
KED351HDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Half Angle (deg)
12
|
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Wavelength (nm)
870
|
Output Power @lf(mA)
20
|
Output Power (mW)
4
|
||
|
KED353KDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Half Angle (deg)
42
|
Package
TO-18, epoxy lens
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Wavelength (nm)
870
|
Output Power @lf(mA)
20
|
Output Power (mW)
6
|
||
|
KED601H Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Half Angle (deg)
14
|
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Wavelength (nm)
890
|
Output Power @lf(mA)
100
|
Output Power (mW)
9
|
||
|
KED602K Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Half Angle (deg)
45
|
Package
TO-18, epoxy lens
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Wavelength (nm)
890
|
Output Power @lf(mA)
50
|
Output Power (mW)
15
|
||
|
|
KED604H Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Half Angle (deg)
60
|
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Wavelength (nm)
890
|
Output Power @lf(mA)
100
|
Output Power (mW)
11
|
||
|
KEDE1304H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Half Angle (deg)
80
|
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
InGaAsP
|
Wavelength (nm)
1300
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|
||
|
KEDE1452H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Half Angle (deg)
20
|
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
InGaAsP
|
Wavelength (nm)
1450
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.8
|